Datasheet Summary
Data Sheet
High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz
Features
Reflective, 50 Ω design Low insertion loss: 0.7 dB typical to 2.0 GHz High power handling at TCASE = 105°C
Long-term (>10 years) average CW power: 43 dBm Peak power: 49 dBm LTE average power (8 dB PAR): 41 dBm
Single event (<10 sec) average LTE average power (8 dB PAR): 44 dBm
High linearity P0.1dB: 47 dBm typical IP3: 70 dBm typical
ESD ratings HBM: 4 kV, Class 3A CDM: 1.25 kV
Single positive supply: 5 V Positive control, CMOS/TTL patible 32-lead, 5 mm × 5 mm LFCSP package
APPLICATIONS
Wireless infrastructure Military and high reliability applications Test equipment Pin diode...