AP1202 - Dual USB High-Side Power Switch

Product Overview

Anachip

Datasheet Details

Part number	AP1202
Manufacturer	Anachip
File Size	793.09 KB
Description	Dual USB High-Side Power Switch
Datasheet	AP1202 Datasheet
Additional preview pages of the AP1202 datasheet.

Product details

Description

The AP1202 series are dual integrated high-side power switch with independent enable and flag functions, optimized for self-powered and bus-powered Universal Serial Bus (USB) applications.

Features

- Compliant to USB specifications - Dual independent switches control - 2.7V to 5.5V input voltage - 500mA minimum continuous current per port - 110mΩ typical on-resistance - 0.75A maximum short circuit current limit - Independent open-drain fault flag pins - 110μA typical on-state supply current - 1μA typical off-state supply current - Output can be forced higher than input (off-state) - Thermal shutdown - 2.4V typical under voltage lockout (UVLO) - 1ms turn-on (soft-start) and fast turn-off -.

📁 Similar Datasheet

AP1203AGMT-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
AP1203AGMT-HF-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
AP1203GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
AP1203GM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
AP1203GMA - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
AP1203GMT-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
AP120N04BD - 40V N-Channel Enhancement Mode MOSFET (APM)
AP120N06BD - 60V N-Channel Enhancement Mode MOSFET (APM)

Other Datasheets by Anachip

AP1212 - Dual USB High-Side Power Switch
AP1084 - 5A Low Dropout Positive Adjustable or Fixed-Mode Regulator
AP1115 - 0.6A Low Dropout Positive Adjustable or Fixed-Mode Regulator
AP1116 - 0.5A Low Dropout Positive Adjustable or Fixed-Mode Regulator
AP1117 - 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator
AP1118 - 1A Positive Low Dropout Fixed-Mode Regulator

Published: Apr 30, 2010 |