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Anachip

AF4835P Datasheet Preview

AF4835P Datasheet

P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET
AF4835P
„ Features
- Simple Drive Requirement
- Low On-resistance
- Fast Switching
„ Product Summary
BVDSS (V)
-30
RDS(ON) (m)
20
ID (A)
-8
„ General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOP-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
„ Pin Assignments
S1
S2
S3
G4
SOP-8
8D
7D
6D
5D
„ Pin Descriptions
Pin Name
S
G
D
Description
Source
Gate
Drain
„ Ordering information
A X 4835P X X X
Feature
F :MOSFET
PN
Package
S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.2 Nov 19, 2004
1/6




Anachip

AF4835P Datasheet Preview

AF4835P Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

P-Channel Enhancement Mode Power MOSFET
AF4835P
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Parameter
ID Continuous Drain Current (Note 1)
IDM
PD
TSTG
TJ
Pulsed Drain Current (Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
TA=25ºC
TA=70ºC
TA=25ºC
„ Thermal Data
Symbol
Parameter
Rthj-amb Thermal Resistance Junction-ambient (Note 1)
Max.
Rating
-30
±20
-8
-6
-50
2.5
0.02
-55 to 150
-55 to 150
Maximum
50
Units
V
V
A
A
W
W/ºC
ºC
ºC
Units
ºC/W
„ Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
Parameter
Test Conditions Min. Typ.
BVDSS
BVDSS / TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
Breakdown Voltage Temperature Reference to 25oC,
Coefficient
ID=-1mA
Static Drain-Source
On-Resistance (Note 3)
VGS=-10V, ID=-8A
VGS=-4.5V, ID=-5A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-15V, ID=-8A
Drain-Source Leakage Current
(TJ=25oC)
VDS=-30V, VGS=0V
Drain-Source Leakage Current
(TJ=70oC)
VDS=-24V, VGS=0V
Gate-Source Leakage
VGS=±20V
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
ID=-4.6A,
VDS=-15V,
VGS=-10V
Turn-On Delay Time (Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
VDS=-15V,
ID=-1A,
RG=6, VGS=-10V
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V,
VDS=-15V,
f=1.0MHz
-30 -
- -0.037
--
--
-1 -
- 20
--
--
--
- 36
- 5.5
- 3.5
- 12
-8
- 75
- 40
- 1530
- 900
- 280
Max.
-
-
20
35
-3
-
-1
-25
±100
-
-
-
-
-
-
-
-
-
-
Units
V
V/oC
m
V
S
uA
nA
nC
ns
pF
„ Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ.
IS
Continuous Source Current
(Body Diode)
VD=VG=0V, VS=-1.2V
-
-
VSD Forward On Voltage (Note 3)
TJ=25oC, IS=-2.1A,
VGS=0V
- -0.75
Note 1: Surface mounted on 1 in2 copper pad of FR4 board; 125oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width 300us, duty cycle 2%.
Max.
-2.08
-1.2
Unit
A
V
Anachip Corp.
www.anachip.com.tw
Rev. 1.2 Nov 19, 2004
2/6


Part Number AF4835P
Description P-Channel Enhancement Mode Power MOSFET
Maker Anachip
Total Page 6 Pages
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