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BLP9G0722-20G - Power LDMOS transistor

Download the BLP9G0722-20G datasheet PDF (BLP9G0722-20 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power ldmos transistor.

Description

20 W plastic LDMOS power transistor for base station applications at frequencies from 100 MHz to 2700 MHz.

Table 1.

Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 180 mA; in a class-AB demo board, tested on gull wing lead device.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for broadband operation.
  • Excellent therm.

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Note: The manufacturer provides a single datasheet file (BLP9G0722-20-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLP9G0722-20G
Manufacturer Ampleon
File Size 614.66 KB
Description Power LDMOS transistor
Datasheet download datasheet BLP9G0722-20G Datasheet

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Full PDF Text Transcription

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BLP9G0722-20; BLP9G0722-20G Power LDMOS transistor Rev. 3 — 26 February 2018 Product data sheet 1. Product profile 1.1 General description 20 W plastic LDMOS power transistor for base station applications at frequencies from 100 MHz to 2700 MHz. Table 1. Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 180 mA; in a class-AB demo board, tested on gull wing lead device. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (dBm) (dB) (%) (dBc) 1-carrier W-CDMA 400 to 430 180 28 35 25.5 24 45 [1] 728 to 768 180 28 35 23 22 45 [1] 1805 to 1880 180 28 35 19 21 45 [1] 2110 to 2170 180 28 35 18 21 45 [1] 2300 to 2400 180 28 35 17.
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