Download the BLP10H6120PG datasheet PDF.
This datasheet also covers the BLP10H6120P variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
A 120 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band.
Table 1.
Key Features
Easy power control.
Integrated dual sided ESD protection enables class C operation and complete switch
off of the transistor.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (HF to 1000 MHz).
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3.
Full PDF Text Transcription for BLP10H6120PG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BLP10H6120PG. For precise diagrams, and layout, please refer to the original PDF.
BLP10H6120P; BLP10H6120PG Power LDMOS transistor Rev. 1 — 20 December 2016 Product data sheet 1. Product profile 1.1 General description A 120 W LDMOS power transistor fo...
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duct profile 1.1 General description A 120 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 720 pulsed RF 915 CW 915 VDS PL (V) (W) 50 120 50 160 50 143 Gp (dB) 18 14.9 15.1 D (%) 72 70.2 62.3 1.2 Features and benefits Easy power control Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 1000 MHz) Compliant to Directive 2002/95/EC, regarding Res
BLP10H6120PG Datasheet
