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BLP05H675XR - Power LDMOS transistor

General Description

A 75 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Table 1.

Key Features

  • Easy power control.
  • Integrated double sided ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 600 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLP05H675XR
Manufacturer Ampleon
File Size 460.20 KB
Description Power LDMOS transistor
Datasheet download datasheet BLP05H675XR Datasheet

Full PDF Text Transcription for BLP05H675XR (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BLP05H675XR. For precise diagrams, and layout, please refer to the original PDF.

BLP05H675XR; BLP05H675XRG Power LDMOS transistor Rev. 4 — 1 September 2016 Product data sheet 1. Product profile 1.1 General description A 75 W extremely rugged LDMOS pow...

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duct profile 1.1 General description A 75 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 75 Gp (dB) 27 D (%) 75 1.2 Features and benefits  Easy power control  Integrated double sided ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 600 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.