Download the BLP05H635XRG datasheet PDF.
This datasheet also covers the BLP05H635XR variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
A 35 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1.
Key Features
Easy power control.
Integrated double sided ESD protection.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (HF to 600 MHz).
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3.
Full PDF Text Transcription for BLP05H635XRG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BLP05H635XRG. For precise diagrams, and layout, please refer to the original PDF.
BLP05H635XR; BLP05H635XRG Power LDMOS transistor Rev. 4 — 21 September 2016 Product data sheet 1. Product profile 1.1 General description A 35 W extremely rugged LDMOS po...
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oduct profile 1.1 General description A 35 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 CW 63.86 127.72 VDS PL (V) (W) 50 35 50 35 50 35 Gp (dB) 27 29.4 26.8 D (%) 75 75.6 75.7 1.2 Features and benefits Easy power control Integrated double sided ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
BLP05H635XRG Datasheet
