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BLP05H635XR - Power LDMOS transistor

General Description

A 35 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Table 1.

Key Features

  • Easy power control.
  • Integrated double sided ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 600 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLP05H635XR
Manufacturer Ampleon
File Size 461.08 KB
Description Power LDMOS transistor
Datasheet download datasheet BLP05H635XR Datasheet

Full PDF Text Transcription for BLP05H635XR (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BLP05H635XR. For precise diagrams, and layout, please refer to the original PDF.

BLP05H635XR; BLP05H635XRG Power LDMOS transistor Rev. 4 — 21 September 2016 Product data sheet 1. Product profile 1.1 General description A 35 W extremely rugged LDMOS po...

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oduct profile 1.1 General description A 35 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 CW 63.86 127.72 VDS PL (V) (W) 50 35 50 35 50 35 Gp (dB) 27 29.4 26.8 D (%) 75 75.6 75.7 1.2 Features and benefits  Easy power control  Integrated double sided ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 600 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.