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BLL9G1214LS-600 Datasheet, Ampleon

BLL9G1214LS-600 transistor equivalent, ldmos l-band radar power transistor.

BLL9G1214LS-600 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 485.01KB)

BLL9G1214LS-600 Datasheet
BLL9G1214LS-600 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 485.01KB)

BLL9G1214LS-600 Datasheet

Features and benefits


* High efficiency
* Excellent ruggedness
* Designed for L-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual side.

Application

in the frequency range from 1.2 GHz to 1.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; t.

Description

600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit. T.

Image gallery

BLL9G1214LS-600 Page 1 BLL9G1214LS-600 Page 2 BLL9G1214LS-600 Page 3

TAGS

BLL9G1214LS-600
LDMOS
L-band
radar
power
transistor
Ampleon

Manufacturer


Ampleon

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