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BLF8G38LS-75V - Power LDMOS transistor

General Description

75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth.
  • Designed for broadband operation (3400 MHz to 3800 MHz).
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLF8G38LS-75V
Manufacturer Ampleon
File Size 352.00 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G38LS-75V Datasheet

Full PDF Text Transcription for BLF8G38LS-75V (Reference)

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BLF8G38LS-75V Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved vid...

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1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 3400 to 3800 600 30 20 15.5 26 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.