BLF8G22LS-205V - Power LDMOS transistor

205 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2100 MHz to 2200 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

• Excellent ruggedness.
• High efficiency.
• Low thermal resistance providing excellent thermal stability.
• Designed for broadband operation.
• Lower output capacitance for improved performance in Doherty.