BLF8G22LS-200V transistor equivalent, power ldmos transistor.
* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation
* Decoupling leads to enab.
at frequencies from 2110 MHz to 2170 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a com.
200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circu.
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