Datasheet Details
| Part number | BLF8G22LS-200GV |
|---|---|
| Manufacturer | Ampleon |
| File Size | 424.63 KB |
| Description | Power LDMOS transistor |
| Datasheet |
 BLF8G22LS-200GV Datasheet
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General Description
200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Key Features
- Excellent ruggedness.
- High efficiency.
- Low Rth providing excellent thermal stability.
- Designed for broadband operation.
- Decoupling leads to enable improved video bandwidth (80 MHz typical).
- Lower output capacitance for improved performance in Doherty.