Datasheet Details
| Part number | BLF8G10LS-300P |
|---|---|
| Manufacturer | Ampleon |
| File Size | 346.89 KB |
| Description | Power LDMOS transistor |
| Datasheet |
 BLF8G10LS-300P Datasheet
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General Description
300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Key Features
- Excellent ruggedness.
- High efficiency.
- Low thermal resistance providing excellent thermal stability.
- Lower output capacitance for improved performance in Doherty.