Download the BLF8G10LS-270GV datasheet PDF.
This datasheet also covers the BLF8G10LS-270V variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Key Features
Excellent ruggedness.
High efficiency.
Low Rth providing excellent thermal stability.
Designed for broadband operation (790 MHz to 960 MHz).
Lower output capacitance for improved performance in Doherty.
Full PDF Text Transcription for BLF8G10LS-270GV (Reference)
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BLF8G10LS-270GV. For precise diagrams, and layout, please refer to the original PDF.
BLF8G10LS-270V; BLF8G10LS-270GV Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transisto...
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1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f VDS PL(AV) Gp D ACPR5M (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 28 67 19.5 31 37[1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 10 MHz. 1.
BLF8G10LS-270GV Datasheet
