logo

BLF8G10LS-160V Datasheet, Ampleon

BLF8G10LS-160V transistor equivalent, power ldmos transistor.

BLF8G10LS-160V Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 356.92KB)

BLF8G10LS-160V Datasheet
BLF8G10LS-160V Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 356.92KB)

BLF8G10LS-160V Datasheet

Features and benefits


* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (60 MHz typ.

Application

at frequencies from 925 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a commo.

Description

160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Image gallery

BLF8G10LS-160V Page 1 BLF8G10LS-160V Page 2 BLF8G10LS-160V Page 3

TAGS

BLF8G10LS-160V
Power
LDMOS
transistor
Ampleon

Manufacturer


Ampleon

Related datasheet

BLF8G10LS-160

BLF8G10LS-270

BLF8G10LS-270GV

BLF8G10LS-270V

BLF8G10LS-300P

BLF8G10L-160

BLF8G19LS-170BV

BLF8G09LS-270GW

BLF8G09LS-270W

BLF8G09LS-400PGW

BLF8G09LS-400PW

BLF8G20LS-160V

BLF8G20LS-220

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts