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BLF8G10LS-160 - Power LDMOS transistor

Download the BLF8G10LS-160 datasheet PDF. This datasheet also covers the BLF8G10L-160 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Designed for broadband operation (920 MHz to 960 MHz).
  • Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF8G10L-160-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF8G10LS-160
Manufacturer Ampleon
File Size 510.21 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G10LS-160 Datasheet

Full PDF Text Transcription for BLF8G10LS-160 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BLF8G10LS-160. For precise diagrams, and layout, please refer to the original PDF.

BLF8G10L-160; BLF8G10LS-160 Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor fo...

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roduct profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 920 to 960 1100 30 35 19.7 29 38 [1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier. Carrier spacing 5 MHz. 1.