Download the BLF8G09LS-400PGW datasheet PDF.
This datasheet also covers the BLF8G09LS-400PW variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Key Features
Excellent ruggedness.
Device can operate with the supply current delivered through the video leads.
Full PDF Text Transcription for BLF8G09LS-400PGW (Reference)
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BLF8G09LS-400PGW. For precise diagrams, and layout, please refer to the original PDF.
BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transis...
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t 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 716 to 728 3400 28 95 20.6 30 35 [1] [1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 10 MHz carrier spacing. 1.
BLF8G09LS-400PGW Datasheet
