BLF183XRS transistor equivalent, power ldmos transistor.
* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband o.
in the HF to 600 MHz band.
Table 1. Application information
Test signal
f (MHz)
VDS
PL
(V) (W)
pulsed RF
108 50 .
A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f (MHz)
VDS
PL
(V) (W)
pulsed RF
108 50 350
CW
88 to 108
50
388
pulsed RF
.
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