BLF174XRS transistor equivalent, power ldmos transistor.
* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband o.
in the HF to 128 MHz band.
Table 1. Application information
Test signal
f
(MHz)
CW 108
pulsed RF
108
VDS
PL
Gp.
A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.
Table 1. Application information
Test signal
f
(MHz)
CW 108
pulsed RF
108
VDS
PL
Gp
(V) (W) (dB)
50 600 28.5
50 600 29
.
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