BLF10H6600P datasheet, transistor equivalent, Ampleon

Features and benefits

* Excellent ruggedness (VSWR  40 : 1 through all phases)
* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
* High power gain
* High efficie.

Application

and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter a.

Description

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f (MHz.

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