BLA8G1011L-300G - Power LDMOS transistor

Ampleon

Download the BLA8G1011L-300G datasheet PDF. This datasheet also covers the BLA8G1011L-300 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Key Features

Easy power control.
Integrated ESD protection.
Enhanced ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1030 MHz to 1090 MHz).
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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BLA8G1011L-300G power ldmos transistor by Ampleon - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BLA8G1011L-300-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BLA8G1011L-300G
Manufacturer	Ampleon
File Size	400.62 KB
Description	Power LDMOS transistor
Datasheet	BLA8G1011L-300G Datasheet

Full PDF Text Transcription for BLA8G1011L-300G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BLA8G1011L-300G. For precise diagrams, and layout, please refer to the original PDF.

BLA8G1011L(S)-300; BLA8G1011L(S)-300G Power LDMOS transistor Rev. 4 — 4 August 2016 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transi...

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et 1. Product profile 1.1 General description 300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) tr (ns) pulsed RF 1060 32 300 16.5 56 14 tf (ns) 5 1.

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