BLA8G1011L-300G transistor equivalent, power ldmos transistor.
* Easy power control
* Integrated ESD protection
* Enhanced ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband op.
at frequencies from 1030 MHz to 1090 MHz.
Table 1. Test information
Typical RF performance at Tcase = 25 C in a class.
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.
Table 1. Test information
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal
f
VDS
PL
Gp
D
(MHz)
(V)
.
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