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BLA8G1011L-300 Datasheet, Ampleon

BLA8G1011L-300 transistor equivalent, power ldmos transistor.

BLA8G1011L-300 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 400.62KB)

BLA8G1011L-300 Datasheet
BLA8G1011L-300
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 400.62KB)

BLA8G1011L-300 Datasheet

Features and benefits


* Easy power control
* Integrated ESD protection
* Enhanced ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband op.

Application

at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 C in a class.

Description

300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL Gp D (MHz) (V) .

Image gallery

BLA8G1011L-300 Page 1 BLA8G1011L-300 Page 2 BLA8G1011L-300 Page 3

TAGS

BLA8G1011L-300
Power
LDMOS
transistor
Ampleon

Manufacturer


Ampleon

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