AFM08P2-000 mesfet equivalent, power gaas mesfet.
s 24 dBm Output Power @ 18 GHz s High Power Added Efficiency, 20% s Broadband Operation, DC
–40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through.
in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged,.
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