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AF002C1-39 - GaAs IC Control FET

General Description

This group of GaAs control FETs can be used in both series and shunt configurations.

They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 µW.

Key Features

  • s Low Cost SOT-23 Package s Series or Shunt Configuration s Low DC Current Drain s Ideal Switch Building Blocks s Pin Diode Replacements s High Power Antenna Switches SOT-23 0.120 (3.05 mm) 0.110 (2.79 mm) 3 0.018 (0.45 mm) 0.015 (0.38 mm) 0.055 (1.40 mm) 0.047 (1.19 mm) 0.024 (0.61 mm) 0.018 (0.45 mm) 0.080 (2.03 mm) 0.070 (1.78 mm) 0.007 (0.18 mm) 0.003 (0.08 mm) 1 2 0.104 (2.64 mm) 0.083 (2.10 mm) 0.040 (1.02 mm) 0.037 (0.94 mm).

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Datasheet Details

Part number AF002C1-39
Manufacturer Alpha Industries
File Size 43.27 KB
Description GaAs IC Control FET
Datasheet download datasheet AF002C1-39 Datasheet

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Other Datasheets by Alpha Industries

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaAs IC Control FET Series DC–2.5 GHz AF002C1-39, AF002C4-39 Features s Low Cost SOT-23 Package s Series or Shunt Configuration s Low DC Current Drain s Ideal Switch Building Blocks s Pin Diode Replacements s High Power Antenna Switches SOT-23 0.120 (3.05 mm) 0.110 (2.79 mm) 3 0.018 (0.45 mm) 0.015 (0.38 mm) 0.055 (1.40 mm) 0.047 (1.19 mm) 0.024 (0.61 mm) 0.018 (0.45 mm) 0.080 (2.03 mm) 0.070 (1.78 mm) 0.007 (0.18 mm) 0.003 (0.08 mm) 1 2 0.104 (2.64 mm) 0.083 (2.10 mm) 0.040 (1.02 mm) 0.037 (0.94 mm) Description This group of GaAs control FETs can be used in both series and shunt configurations. They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 µW.