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D452 - N-Channel MOSFET

Features

  • The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose.

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Other Datasheets by Alpha & Omega Semiconductors

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    AOD452 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.5 mΩ (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 4.5V) 100% UIS tested 100% Rg tested Top View D TO-252 D-PAK Bottom View D GS SG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Pulsed Forward Diode CurrentC Avalanche Current C Repetitive avalanche energy L=0.
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