The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
AOWF190A60
600V, a MOS5 TM N-Channel Power Transistor
General Description
• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI
performance • Enhanced body diode for robustness and fast reverse
recovery
Applications
• SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting, Telecom
Product Summary
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
TO-262F
Top View
Bottom View
700V 80A < 0.19Ω 34nC 4.
AOWF190A60 Datasheet
