AOTF9608, AOT9608 Datasheet - Alpha & Omega Semiconductors

AOTF9608 10A N-Channel MOSFET

The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopt.

AOTF9608 Features

* VDS (V) = 700V @ 150°C ID = 10A RDS(ON) < 0.75 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G G D G S D S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT10N60 Parameter Symbol AOTF10N60 VDS Drain-Source Voltage 600 VGS ±3

AOT9608_AlphaOmegaSemiconductors.pdf