| Description | Product Summary The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free... |
| Features |
lanche energy C
Single pulsed avalanche energy G
ID
IDM IAR EAR EAS
4 3.7
16 1.6 38 77
TC=25°C Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
PD dv/dt
83 0.67
100 20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering purpose, 1/8" from case for 5 se...
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| Datasheet |
 AOTF4S60 Datasheet - 296.33KB |
