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Alpha & Omega Semiconductors

AOTF11N60L Datasheet Preview

AOTF11N60L Datasheet

11A N-Channel MOSFET

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AOT11N60L/AOTF11N60L/AOTF11N60
600V,11A N-Channel MOSFET
General Description
Product Summary
The AOT11N60L & AOTF11N60L & AOTF11N60
have been fabricated using an advanced high voltage
MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-
DC applications.By providing low RDS(on), Ciss and Crss
along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing
offline power supply designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
D
Top View
TO-220F
700V@150
11A
< 0.65
D
AOT11N60L
S
D
G
AOTF11N60(L)
S
GD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT11N60L
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
11
8
Power Dissipation B
TC=25°C
Derate above 25oC
PD
272
2.2
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT11N60L
65
0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.46
AOTF11N60
600
±30
11*
8*
39
4.8
345
690
5
50
0.4
-55 to 150
300
AOTF11N60
65
--
2.5
G
AOTF11N60L
11*
8*
37.9
0.3
AOTF11N60L
65
--
3.3
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 1.0: Sepetember 2017
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOTF11N60L Datasheet Preview

AOTF11N60L Datasheet

11A N-Channel MOSFET

No Preview Available !

Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=5.5A
VDS=40V, ID=5.5A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=11A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=11A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=11A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V
600
700
V
0.67
V/ oC
1
10 µA
±100 nΑ
3.3 3.9 4.5
V
0.56 0.65
12 S
0.73 1
V
11 A
39 A
1320
100
6.5
1.7
1656
146
11.2
3.5
1990
195
16
5.3
pF
pF
pF
24 30.6 37
9.6
9.6
39
58
92
42
400 500 600
4.7 5.9 7.1
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.8A, VDD=150V, RG=25, Starting TJ=25°C
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1.0: Sepetember 2017
www.aosmd.com
Page 2 of 6


Part Number AOTF11N60L
Description 11A N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 6 Pages
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