Datasheet Details
| Part number | AOSP66919 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 243.06 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 AOSP66919 Datasheet
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| Part number | AOSP66919 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 243.06 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
AOSP66919 Datasheet
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent Qg x RDS(ON) Product (FOM) • RoHS 2.0 and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 16A < 6.5mΩ < 8.5mΩ SO-8 Top View Bottom View D D D D D G S S S Orderable Part Number AOSP66919 Package Type SO-8 G S Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 16 12 64 48 115 3.1 2.0 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.2: January 2024 www.aosmd.com Page 1 of 5 AOSP66919 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.5 VGS=10V, ID=16A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=16A gFS Forward Transconductance VDS=5V, ID=16A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V,
AOSP66919 100V N-Channel AlphaSGT TM General.
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