n-channel p-channel VDS (V) = 30V -30V -6.2A (V GS=10V) ID = 7.7A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 37m Ω (VGS = -10V) < 42m Ω (VGS=4.5V) < 60m Ω (VGS = -4.5V.

A Schottky diode in parallel with the n-channel FET reduces body diode related losses. It is ESD protected. Standard pr.

The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel wi.

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