n-channel p-channel VDS (V) = 30V -30V -6.2A (V GS=10V) ID = 7.7A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 37m Ω (VGS = -10V) < 42m Ω (VGS=4.5V) < 60m Ω (VGS = -4.5V.

A Schottky diode in parallel with the n-channel FET reduces body diode related losses. It is ESD protected. Standard pr.

The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel wi.

AOP611

AOP600

AOP601

AOP604

AOP605

AOP605L

AOP606

AOP607

AOP608

AOP609

AOP1203-1001

AOP1203-1002

AOP1203-2001

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