Datasheet Details
| Part number | AONS36321 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 341.71 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
 AONS36321 Datasheet
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| Part number | AONS36321 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 341.71 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
AONS36321 Datasheet
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Applications • DC/DC Converters in Computing, Servers and POL • Isolated DC/DC Converters in Telecom and Industrial • See Note H Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 88A < 4.4mΩ < 7.7mΩ HBM Class H2 Top View DFN5X6 Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5D Orderable Part Number AONS36321 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 88 55 167 30 24 50 13 54 22 6.2 4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 1.8 Max 20 50 2.3 Units °C/W °C/W °C/W Rev.1.0: May 2024 www.aosmd.com Page 1 of 6 AONS36321 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage
AONS36321 30V N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AONS36303 | 30V N-Channel MOSFET |
| AONS36304 | 30V N-Channel MOSFET |
| AONS36306 | 30V N-Channel MOSFET |
| AONS36308 | 30V N-Channel MOSFET |
| AONS36312 | 30V N-Channel MOSFET |
| AONS36314 | 30V N-Channel MOSFET |
| AONS36316 | 30V N-Channel MOSFET |
| AONS36333 | 30V N-Channel MOSFET |
| AONS36344 | 30V N-Channel MOSFET |
| AONS36348 | 30V N-Channel MOSFET |