Datasheet Details
| Part number | AONR21321 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 318.83 KB |
| Description | 30V P-Channel MOSFET |
| Download | AONR21321 Download (PDF) |
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Overview: AONR21321 30V P-Channel MOSFET General.
| Part number | AONR21321 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 318.83 KB |
| Description | 30V P-Channel MOSFET |
| Download | AONR21321 Download (PDF) |
|
|
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• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) 100% UIS Tested 100% Rg Tested -30V -24A < 16.5mΩ < 29.5mΩ DFN 3x3_EP Top View Bottom View Pin 1 PIN1 Top View 18 27 36 45 D G S Orderable Part Number AONR21321 Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -24 -20 -66 -13 -10 25 31 24 9.6 4.1 2.6 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 24 47 4.2 Max 30 60 5.2 Units °C/W °C/W °C/W Rev.1.0: November 2017 www.aosmd.com Page 1 of 6 AONR21321 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±25V VDS=VGS, ID=-250µA VGS=-10V, ID=-12A VGS=-4.5V, ID=-10A Forward Transconductance VDS=-5V, ID=-12A Diode Forward Voltage IS=-1A, VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Cos
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