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AON6426 - 30V N-Channel MOSFET

General Description

The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

(VGS = 10V) (VGS = 10V) (VGS = 4.

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AON6426 30V N-Channel MOSFET General Description The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS (V) = 30V ID = 65A RDS(ON) < 5.5mW RDS(ON) < 7.5mW (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! Top View DFN5X6 Bottom View PIN1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAR Repetitive avalanche energy L=0.