Datasheet Details
| Part number | AON6154 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.40 KB |
| Description | 45V N-Channel MOSFET |
| Datasheet |
 AON6154 Datasheet
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| Part number | AON6154 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.40 KB |
| Description | 45V N-Channel MOSFET |
| Datasheet |
AON6154 Datasheet
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 45V 100A < 1.5mΩ < 2.1mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View DFN5x6 Bottom View PIN1 PIN1 Top View 18 27 36 45 D G S Orderable Part Number AON6154 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.3mH C VGS ID IDM IDSM IAS EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 45 ±20 100 100 400 49 39 45 304 54 125 50 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 15 40 0.8 Max 20 50 1.0 Units °C/W °C/W °C/W Rev.1.0: November 2015 www.aosmd.com Page 1 of 6 AON6154 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=45V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125°C DYNAMIC PAR
AON6154 45V N-Channel MOSFET General.
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