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AON4805L - 20V P-Channel MOSFET

General Description

The AON4805L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS (V) = -20V ID = -4.5A (VGS = -4.5V) RDS(ON) < 65mW (VGS = -4.5V) RDS(ON) < 85mW (VGS = -2.5V) RDS(ON) < 115mW (VGS = -1.8V) Top View DFN 3x2 Bottom View Pin 1 S1 1 8 D1 G1 2 7 D1 S2 3 4 G2 6 5 D2 D2 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction a.

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Full PDF Text Transcription (Reference)

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AON4805L 20V P-Channel MOSFET General Description The AON4805L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. -RoHS Compliant -Halogen Free Features VDS (V) = -20V ID = -4.5A (VGS = -4.5V) RDS(ON) < 65mW (VGS = -4.5V) RDS(ON) < 85mW (VGS = -2.5V) RDS(ON) < 115mW (VGS = -1.