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Alpha & Omega Semiconductors

AON2411 Datasheet Preview

AON2411 Datasheet

12V P-Channel MOSFET

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AON2411
12V P-Channel MOSFET
General Description
• Latest Trench Power MOSFET technology
• Very Low RDS(ON) at 1.8V VGS
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
Application
• Battery path load switch
• System load switch
Product Summary
VDS
ID (at VGS=-4.5V)
RDS(ON) (at VGS=-4.5V)
RDS(ON) (at VGS=-3.0V)
RDS(ON) (at VGS=-2.5V)
RDS(ON) (at VGS=-1.8V)
Typical ESD protection
DFN 2x2C
Top View
Bottom View
-12V
-20A
< 8m
< 10.2m
< 11.6m
< 17.5m
HBM Class 2
D
Pin 1
S
Pin 1
D
G
Orderable Part Number
AON2411
Package Type
DFN 2x2C
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current G
TA=70°C
Pulsed Drain Current C
TA=25°C
Power Dissipation B TA=70°C
ID
IDM
PD
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t 10s
Steady-State
Symbol
RθJA
Typ
20
45
G
Form
Tape & Reel
S
Minimum Order Quantity
3000
Maximum
-12
±8
-20
-15.5
-80
5.0
3.2
-55 to 150
Units
V
V
A
W
°C
Max
25
55
Units
°C/W
°C/W
Rev.1.0: December 2013
www.aosmd.com
Page 1 of 5




Alpha & Omega Semiconductors

AON2411 Datasheet Preview

AON2411 Datasheet

12V P-Channel MOSFET

No Preview Available !

Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
ID=-250µA, VGS=0V
VDS=-12V, VGS=0V
VDS=0V, VGS=±8V
VDS=VGS, ID=-250µA
VGS=-4.5V, ID=-12A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance VGS=-3.0V, ID=-11A
VGS=-2.5V, ID=-10A
VGS=-1.8V, ID=-8A
Forward Transconductance
VDS=-5V, ID=-12A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-6V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=-4.5V, VDS=-6V, ID=-12A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-4.5V, VDS=-6V, RL=0.5,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
Min
-12
-0.3
Typ Max Units
-0.6
6.6
8.6
8.1
9.2
13.7
60
-0.59
-1
-5
±10
-0.9
8.0
10.4
10.2
11.6
17.5
-1
-7
V
µA
µA
V
m
m
m
m
S
V
A
2180
675
425
13.5
pF
pF
pF
20 30 nC
4 nC
5.5 nC
15 ns
45 ns
135 ns
185 ns
28 ns
13 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: December 2013
www.aosmd.com
Page 2 of 5


Part Number AON2411
Description 12V P-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 5 Pages
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