| Description | Product Summary The AOD9N50 & AOI9N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) R... |
| Features |
EAS
433
Peak diode recovery dv/dt
dv/dt
5
TC=25°C Power Dissipation B Derate above 25oC
PD
178 1.4
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
-50 to 150 300
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximu...
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| Datasheet |
 AOI9N50 Datasheet - 388.38KB |
