AOD609G datasheet, transistor equivalent, Alpha & Omega Semiconductors

AOD609G transistor equivalent, complementary enhancement mode field effect transistor.

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 524.23KB)

Features and benefits

n-channel VDS (V) = 40V, ID = 12A (VGS=10V) RDS(ON)< 30mW (VGS=10V) RDS(ON)< 40mW (VGS=4.5V) p-channel VDS (V) = -40V, ID = -12A (VGS=-10V) RDS(ON)< 45mW (VGS= -10V) RDS(.

Application

-RoHS Compliant -Halogen Free* Features n-channel VDS (V) = 40V, ID = 12A (VGS=10V) RDS(ON)< 30mW (VGS=10V) RDS(ON)< 4.

Description

The AOD609G uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. -RoHS Compliant -Halogen Free* Features n-channel VDS (V) = 40.

Image gallery