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AOD2HC60
600V,2.5A N-Channel MOSFET
General Description
The AOD2HC60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
Product Summary
VDS @ Tj,max 700
IDM RDS(ON),max Qg,typ Eoss @ 400V
14A < 2Ω 7.6nC 1.6µC
100% UIS Tested! 100% Rg Tested!
TO252 DPAK Top View Bottom View D D
D
S S G AOD2HC60
G
G S
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS
Maximum 600 ±30 2.5 2 14 7.5 28 132 100 20 74 0.
AOD2HC60 Datasheet
