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AOCA33104E - 12V Common-Drain Dual N-Channel MOSFET

General Description

Trench Power MOSFET technology Ultra low RSS(ON) Common drain configuration for design simplicity RoHS and Halogen-Free Compliant Applications Battery protection switch Mobile device battery charging and discharging Product Summary VSS RSS

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AOCA33104E 12V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Ultra low RSS(ON) • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 2.8mΩ < 3mΩ < 3.5mΩ < 4.2mΩ HBM Class 2 AlphaDFNTM 2.98x1.49_10 Top View D1 D2 Top View Bottom View 10 7 8 9 6 2 3 5 G1 G2 1 4 Pin1 Pin1 1, 2, 4, 5: Source(FET1) 6, 7, 9, 10: Source(FET2) S1 S2 3: Gate(FET1) 8: Gate(FET2) Orderable Part Number AOCA33104E Package Type AlphaDFNTM 2.98x1.