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AOC2804 Datasheet 20V Common-Drain Dual N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

General Description

Product Summary • Trench Power AlphaMOS (αMOS LV) technology • Low RSS(ON) • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications VSS IS (at VGS=4.5V) RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.7V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection • Battery protection switch • Mobile device battery charging and discharging 20V 4A < 22mΩ < 24mΩ < 25mΩ < 29mΩ < 36mΩ HBM Class 3A AlphaDFN 1.5x1.5_4 Top View Bottom View Top View Pin1 Orderable Part Number AOC2804 Package Type AlphaDFN 1.5x1.5_4 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage VSS Gate-Source Voltage VGS Source Current(DC) Note1 TA=25°C IS Source Current(Pulse) Note2 ISM Power Dissipation Note1 TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RθJA Note 1.

Mounted on 1in2 FR-4 board with 2oz.

Copper.

Overview

AOC2804 20V Common-Drain Dual N-Channel AlphaMOS General.