Datasheet Details
| Part number | AOC2412 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 218.38 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet |
 AOC2412 Datasheet
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| Part number | AOC2412 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 218.38 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet |
AOC2412 Datasheet
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The AOC2412 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 8V VGS(MAX) rating.
Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) RDS(ON) (at VGS=1.8V) Typical ESD protection 20V 4.5A < 23mΩ < 26mΩ < 30mΩ HBM Class 3A MCSP 1.57x1.57_4 Top View Bottom View Top View Pin1(G) Bottom View 32 DD S 4 G 1 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 Source Current (Pulse) Note2 Power Dissipation Note1 TA=25°C TA=25°C VGS ID IDM PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 4.5 65 0.55 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Note 1.
Mounted on minimum pad PCB Note 2.
AOC2412 20V N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AOC2411 | 30V P-Channel MOSFET |
| AOC2413 | 8V P-Channel MOSFET |
| AOC2414 | 8V N-Channel MOSFET |
| AOC2415 | 20V P-Channel MOSFET |
| AOC2417 | 20V P-Channel MOSFET |
| AOC2401 | 30V P-Channel MOSFET |
| AOC2421 | 8V P-Channel MOSFET |
| AOC2422 | 8V N-Channel MOSFET |
| AOC2423 | 20V P-Channel MOSFET |
| AOC2800 | Common-Drain Dual N-Channel MOSFET |