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AOB4184 - 40V N-Channel MOSFET

Description

The AOB4184 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications.

Features

  • VDS (V) =40V ID = 50 A RDS(ON) < 10 mΩ RDS(ON) < 13 mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested TO-263 Top View D2PAK Bottom View D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current A Avalanche Current C TC=25°C TC=70°C Avalanche energy L=100uH C IDSM IAS, I.

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Full PDF Text Transcription

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AOB4184 40V N-Channel MOSFET General Description The AOB4184 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications. Features VDS (V) =40V ID = 50 A RDS(ON) < 10 mΩ RDS(ON) < 13 mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.
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