Datasheet4U Logo Datasheet4U.com

AOB405 - P-Channel MOSFET

General Description

The AOB405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications.

Key Features

  • VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 48mΩ (VGS = -10V) RDS(ON) < 72mΩ (VGS = -4.5V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Therm.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com AOB405 P-Channel Enhancement Mode Field Effect Transistor General Description The AOB405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications. Standard Product AOB405 is Pb-free (meets ROHS & Sony 259 specifications). AOB405L is a Green Product ordering option. AOB405 and AOB405L are electrically identical. Features VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 48mΩ (VGS = -10V) RDS(ON) < 72mΩ (VGS = -4.