Datasheet4U Logo Datasheet4U.com

AO7800 - 20v Dual N-Channel MOSFET

General Description

The AO7800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT363 footprint.

It can be used for a wide variety of applications, including load switching, low current inverters and low current DCDC converters.

Key Features

  • VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) RDS(ON) < 300mW (VGS = 4.5V) RDS(ON) < 350mW (VGS = 2.5V) RDS(ON) < 450mW (VGS = 1.8V) SC70-6L (SOT-363) Top View Bottom View Pin1 Pin1 D1 S1 1 6 D1 G1 2 5 G2 G1 D2 3 4 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Power Dissipation A TA=25°C TA=70°C PD Junction and Stor.

📥 Download Datasheet

Full PDF Text Transcription for AO7800 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AO7800. For precise diagrams, and layout, please refer to the original PDF.

AO7800 20v Dual N-Channel MOSFET General Description The AO7800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate volt...

View more extracted text
rovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT363 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DCDC converters.It is ESD protected. Features VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) RDS(ON) < 300mW (VGS = 4.5V) RDS(ON) < 350mW (VGS = 2.5V) RDS(ON) < 450mW (VGS = 1.