Datasheet4U Logo Datasheet4U.com

AO6400 - 30V N-Channel MOSFET

Description

The AO6400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO6403 P-Channel MOSFET VBsemi
AO6409A P-Channel MOSFET VBsemi
AO6601 N- and P-Channel 20V MOSFET VBsemi
AO6604 Dual-Channel MOSFET VBsemi
AO6800 Dual N-Channel MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO6401 30V P-Channel MOSFET
AO6401A P-Channel MOSFET
AO6402 30V N-Channel MOSFET
AO6402A 30V N-Channel MOSFET
AO6402L N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AO6400 30V N-Channel MOSFET General Description Product Summary The AO6400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 6.9A < 28mW < 33mW < 52mW TSOP6 Top View Bottom View Top View D Pin1 D1 D2 G3 6 D 5 D 4 S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 6.9 5.