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AO4720 - N-Channel Enhancement Mode Field Effect Transistor

Description

SRFET The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

Features

  • VDS (V) = 30V ID =13A (VGS = 10V) RDS(ON) < 11mΩ (VGS = 10V) RDS(ON) < 17.5mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G D D D D www. DataSheet4U. com G S SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Max Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C AF Current TA=70°C B Pulsed Drain Current Avalanche Current C Symbol VDS VGS 10 Sec Steady State 30 ±20 13 10 7.8 120 21 66 3.1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRFET TM AO4720 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4720 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID =13A (VGS = 10V) RDS(ON) < 11mΩ (VGS = 10V) RDS(ON) < 17.5mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G D D D D www.DataSheet4U.
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