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AO4614A - MOSFET

Datasheet Summary

Description

The AO4614A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

specifications).

Features

  • n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31mΩ (VGS=10V) < 45mΩ (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 D2 D1 G2 S2 G1 S1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM 6 5 20 Pow.

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Datasheet Details

Part number AO4614A
Manufacturer Alpha & Omega Semiconductors
File Size 146.51 KB
Description MOSFET
Datasheet download datasheet AO4614A Datasheet
Additional preview pages of the AO4614A datasheet.

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Full PDF Text Transcription

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AO4614A Complementary Enhancement Mode Field Effect Transistor General Description The AO4614A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614A is Pb-free (meets ROHS & Sony 259 specifications). Features n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31mΩ (VGS=10V) < 45mΩ (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.
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