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AO4614A Datasheet MOSFET

Manufacturer: Alpha & Omega Semiconductors

General Description

The AO4614A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Standard Product AO4614A is Pb-free (meets ROHS & Sony 259 specifications).

Overview

AO4614A Complementary Enhancement Mode Field Effect Transistor.

Key Features

  • n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31mΩ (VGS=10V) < 45mΩ (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 D2 D1 G2 S2 G1 S1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM 6 5 20 Pow.